200um InGaAs APD Preamplifier Module Excelitas
CR200AH-1550-100M
The CR2000AH-1550-70M includes a 200um InGaAs Avalanche Photodiode with a hybrid preamplifier for the use in
high speed, ultra-low light detection, in laser range finding, LIDAR and free space communication.
■ Features
● Built in 200um InGaAs+TIA
● High sensitivity：≥500kV/W
● High bandwidth：70Mhz
● Wavelength range:1100~1700nm
● Low noise and high reliability
● TO8 package with flat window
■ Applications
● LIDAR
● Laser range finding
● Free space optical communication (FSO)
■ Absolute Maximum Ratings
Optical/Electrical Characteristics (T=25℃，unless otherwise stated)
Parameter Symbol Value Min Typ Max Unit Test conditions
Response Spectrum λ 1100~1700 nm
Active Diameter D 200 um
Reverse breakdown
voltage VBR 30 70 V
Operating voltage VR VR-3 V M=10
Responsivity RV 500 kV/W M=10, 1.55um@τ=100ns
Dynamic range DY 25 dB M=10, 1.55um @τ=100ns
Parameter Unit Symbol Rating
Reverse breakdown voltage V VR VBR
Operating temperature ℃ TC -40～+85
Storage temperature ℃ TSTG -55～+100
Maximum optical input power mW Pin 100
Module mains voltage V Vcc/VEE ±6
Power dissipation mW Pw 250
Soldering temperature(time) ℃ - 300（10s）
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-3dB bandwidth BW 70 Mhz M=10, 1.55um @τ=100ns
Rise/Fall time tr 5 ns M=10, 1.55um @τ=100ns
Noise Equivalent Power NEP 100 fW/√Hz M=10，f=100kHz, △=1hz
Output impedance RO 50 Ω
Output Voltage Swing VO 0.7 V
Positive Supply Current ICC 30 mA
Negative Supply Current IEE 10 mA 50Ω Load
Temperature sensor
sensitivity α -1.8 -2.1 -2.4 mV/oC -55℃～+85℃
Temperature coefficient
of Vop for constant gain γ
0.14
V/ oC
-45～+20℃
0.11 +20℃~85℃
Concentricity △D 20 um
■Schematic Block Diagram
■ Block Diagram and Pin description
Pin description
PIN # DESC PIN # DESC
1 OUTPUT 7 NC
2 NC 8 TEMP SENS A
3 -5V 9 TEMP SENS B
4 HV, APD BIAS 10 GND
5 NC 11 NC
6 CASE 12 +5V
www.csrayzer.cn CSRayzer Opitcal Technology Co., Ltd. INTL@csrayzer.com